Patterning of pyramidal recesses in (1 0 0)InP substrate
Identifieur interne : 002802 ( Main/Repository ); précédent : 002801; suivant : 002803Patterning of pyramidal recesses in (1 0 0)InP substrate
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Abstract
Symmetrical pyramidal recesses were etched into (1 0 0)InP substrate in 3HCl:1H3PO4 at (16 ± 0.05) °C via 20 μm x 20 μm square windows opened in InGaAs. The windows had sides aligned in (0 0 1) and corners tapered along [0 1 1] and [0 1 1]. The recesses had each of the four sides at the square edges composed of a large ordinary facet (called pyramidal) and a small re-entrant facet. The pairs were identified to be initially close to {1 1 0)/{1 1 0} (pyramidal pairs), i.e. the ordinary pyramidal facets were initially close to (1 1 0), (1 0 1), (110), and (101). However, they deviated towards planes with higher Miller indices with etching duration. The recesses were also confined to etch-stop ∼{0 1 1} and fast-etching ∼(1 1 1)B facets at the [0 1 1] taper edges and etch-stop ∼{2 1 1}A ones at the [0 1 1] taper edges. The recesses evolved into sharp inverted pyramids with sub-100 nm extremities at the bottom if etched at least 30 min. The sharpening is possible thanks to the elimination of the etch-stop ∼{2 1 1}A facets via a self-limited etching of the pyramidal pairs.
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Soltys</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1><s2>841 04 Bratislava</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>841 04 Bratislava</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0510179</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 10-0510179 INIST</idno><idno type="RBID">Pascal:10-0510179</idno><idno type="wicri:Area/Main/Corpus">003A27</idno><idno type="wicri:Area/Main/Repository">002802</idno></publicationStmt><seriesStmt><idno type="ISSN">0167-9317</idno><title level="j" type="abbreviated">Microelectron. eng.</title><title level="j" type="main">Microelectronic engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term><term>Etching</term><term>Faceting</term><term>Indium phosphide</term><term>Patterning</term><term>Wet process</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Formation motif</term><term>Gravure</term><term>Facettage</term><term>Procédé voie humide</term><term>Phosphure d'indium</term><term>Composé binaire</term><term>8116R</term><term>InP</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Symmetrical pyramidal recesses were etched into (1 0 0)InP substrate in 3HCl:1H<sub>3</sub>PO<sub>4</sub> at (16 ± 0.05) °C via 20 μm x 20 μm square windows opened in InGaAs. The windows had sides aligned in (0 0 1) and corners tapered along [0 1 1] and [0 1 1]. The recesses had each of the four sides at the square edges composed of a large ordinary facet (called pyramidal) and a small re-entrant facet. The pairs were identified to be initially close to {1 1 0)/{1 1 0} (pyramidal pairs), i.e. the ordinary pyramidal facets were initially close to (1 1 0), (1 0 1), (110), and (101). However, they deviated towards planes with higher Miller indices with etching duration. The recesses were also confined to etch-stop ∼{0 1 1} and fast-etching ∼(1 1 1)B facets at the [0 1 1] taper edges and etch-stop ∼{2 1 1}A ones at the [0 1 1] taper edges. The recesses evolved into sharp inverted pyramids with sub-100 nm extremities at the bottom if etched at least 30 min. The sharpening is possible thanks to the elimination of the etch-stop ∼{2 1 1}A facets via a self-limited etching of the pyramidal pairs.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0167-9317</s0></fA01><fA02 i1="01"><s0>MIENEF</s0></fA02><fA03 i2="1"><s0>Microelectron. eng.</s0></fA03><fA05><s2>88</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Patterning of pyramidal recesses in (1 0 0)InP substrate</s1></fA08><fA11 i1="01" i2="1"><s1>ELIAS (P.)</s1></fA11><fA11 i1="02" i2="1"><s1>KOSTIC (I.)</s1></fA11><fA11 i1="03" i2="1"><s1>SOLTYS (J.)</s1></fA11><fA14 i1="01"><s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1><s2>841 04 Bratislava</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Informatics, Slovak Academy of Sciences, Dúbravská cesta 9</s1><s2>845 07 Bratislava</s2><s3>SVK</s3><sZ>2 aut.</sZ></fA14><fA20><s1>36-40</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>20003</s2><s5>354000193947180080</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>20 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0510179</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Microelectronic engineering</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Symmetrical pyramidal recesses were etched into (1 0 0)InP substrate in 3HCl:1H<sub>3</sub>PO<sub>4</sub> at (16 ± 0.05) °C via 20 μm x 20 μm square windows opened in InGaAs. The windows had sides aligned in (0 0 1) and corners tapered along [0 1 1] and [0 1 1]. The recesses had each of the four sides at the square edges composed of a large ordinary facet (called pyramidal) and a small re-entrant facet. The pairs were identified to be initially close to {1 1 0)/{1 1 0} (pyramidal pairs), i.e. the ordinary pyramidal facets were initially close to (1 1 0), (1 0 1), (110), and (101). However, they deviated towards planes with higher Miller indices with etching duration. The recesses were also confined to etch-stop ∼{0 1 1} and fast-etching ∼(1 1 1)B facets at the [0 1 1] taper edges and etch-stop ∼{2 1 1}A ones at the [0 1 1] taper edges. The recesses evolved into sharp inverted pyramids with sub-100 nm extremities at the bottom if etched at least 30 min. 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